Materials and Spectroscopies for Nanoelectronics and Spintronics
Our research is mainly devoted to the experimental investigation of semiconductors, oxides, and their interfaces, silicon and germanium nanostructures, MoS2 growth, and magnetic thin films for advanced and innovative nanoelectronic, spintronic, and neuroelectronic devices. The research activity is carried out in strong collaboration with the CNR-IMM-MDM and leading semiconductor industries, Micron and ST.
Study of the electronic properties of point defects in semiconductors (Si, Ge) and in high dielectric constant materials (transition metal oxides) and at their interfaces.
Quantum dots The study of QD-based devices (colloidal nanoparticles of PbS, CdSe, CdS, Au) is carried out using charge and spin transport aiming at the understanding of strongly correlated few electrons/excitons systems and their possible applications, such as reservoir computing and quantum computing.
TDMC (MoS2, WS2) and magnetic thin films TMDC are grown with a novel patented method and their properties characterized with Raman spectroscopy (Collaboration with E. Bonera) and electrical measurements. Magnetic thin films deposited at CNR-MDM for spintronics are characterized with broad band FMR. (Collaboration with R. Mantovan and M. Belli, CNR-IMM).
Microelectrodes for neurolectronics Within the Neureka EU project (www.neureka.gr) deposition by ALD and characterization by impedance spectroscopy and noise of novel materials and structures for neuron stimulation and recording.
Growth and processing
Atomic Layer Deposition (ALD) mini-chamber with O3 line for in-situ characterization.
Horizontal and vertical furnaces for annealing and diffusion
Q-switched Ruby laser for laser annealing
Two CW X-band systems for electron spin resonance (ESR) spectroscopy, electrically detected spin resonance spectroscopy (EDMR) and electron nuclear double resonance spectroscopy (ENDOR). Variable temperature measurements (4-600 K).
Multi-frequency (0.1-40 GHz) EDMR
Set-up for inelastic electron tunnelling spectroscopy (IETS) working in the temperature range 4-300 K
Electrical: I-V, C-V, DLTS (20K-300K), Probe station
Prof. Marco Fanciulli
Prof. Fabrizio Moro
Website of the EPR lab
Website of the University EPR lab